Reflection high‐energy electron diffraction intensity oscillation study of InGaAs and InAlAs on InP: Application to pseudomorphic heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98723
Reference22 articles.
1. Molecular beam epitaxy
2. Oscillations in the surface structure of Sn-doped GaAs during growth by MBE
3. Oscillations in the surface structure of Sn-doped GaAs during growth by MBE
4. RED intensity oscillations during MBE of GaAs
5. Dynamics of film growth of GaAs by MBE from Rheed observations
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