Dependence of the reflection high-energy electron diffraction oscillation shape on the molecular migration time and the oscillation period-Reference-Cited by-同舟云学术

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Dependence of the reflection high-energy electron diffraction oscillation shape on the molecular migration time and the oscillation period

Published:2002-05 Issue:3-4 Volume:240 Page:363-367
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lee H.G.,Kang T.W.,Kim T.W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Molecular Beam Epitaxy;Herman,1989

2. Layer‐by‐layer sublimation observed by reflection high‐energy electron diffraction intensity oscillation in a molecular beam epitaxy system

3. Dynamics of film growth of GaAs by MBE from Rheed observations

4. Oscillations in the surface structure of Sn-doped GaAs during growth by MBE

5. Layer‐by‐layer sublimation observed by reflection high‐energy electron diffraction intensity oscillation in a molecular beam epitaxy system

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