Modulation‐doped GaInAs/GaInAsP strained multiple‐quantum‐well lasers grown by chemical beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112371
Reference17 articles.
1. Theory of the linewidth of semiconductor lasers
2. Nature of wavelength chirping in directly modulated semiconductor lasers
3. Linewidth enhancement factor in strained quantum well lasers
4. Potential chirpless DFB laser for InGaAs/InGaAsP compressive-strained quantum wells using modulation doping
5. Theoretical analysis of extremely small linewidth enhancement factor and enhanced differential gain in modulation‐doped strained quantum‐well lasers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Doping effect on the intermixing in GaInAsP/InP multiple quantum well structures grown using all solid sources;Journal of Crystal Growth;2004-08
2. Beryllium doping of InP during metalorganic molecular beam epitaxy using bismethylcyclopentadienyl-beryllium;Journal of Crystal Growth;1998-01
3. Be–Zn interdiffusion and its influence on InGaAsP lasers fabricated by hybrid growth of chemical beam epitaxy and metalorganic vapor phase epitaxy;Applied Physics Letters;1997-05-26
4. Excitonic transitions in Cd0.053Zn0.947Te/ZnTe strained single quantum wells grown by double-well temperature-gradient vapour transport deposition;Journal of Materials Science Letters;1996
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