Beryllium doping of InP during metalorganic molecular beam epitaxy using bismethylcyclopentadienyl-beryllium
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Advances in MOVPE, MBE, and CBE
2. Variation of intervalence band absorption with hole concentration inp‐type InP
3. Double doped low etch pit density InP with reduced optical absorption
4. Electrical and optical properties of Be‐doped InP grown by molecular beam epitaxy
5. Modulation‐doped GaInAs/GaInAsP strained multiple‐quantum‐well lasers grown by chemical beam epitaxy
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