Be–Zn interdiffusion and its influence on InGaAsP lasers fabricated by hybrid growth of chemical beam epitaxy and metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119053
Reference8 articles.
1. Chemical beam epitaxy growth of 1.3 μm InGaAsP/InP double heterostructure lasers using all gas source doping
2. Chemical beam epitaxy of 1.55-um separate confinement heterostructure multiple quantum well laser diodes
3. Effect of Zn on the electro-optical characteristics of metalorganic chemical vapour deposition grown 1.3 [micro sign]m InGaAsP/InP lasers
4. Zinc‐enhanced beryllium redistribution in GaAs/GaAlAs grown by molecular beam epitaxy
5. Modulation‐doped GaInAs/GaInAsP strained multiple‐quantum‐well lasers grown by chemical beam epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Potential of MOMBE/CBE for the production of photonic devices in comparison with MOVPE;Journal of Crystal Growth;1998-06
2. Wide-band polarization-independent tensile-strained InGaAs MQW-SOA gate;IEEE Photonics Technology Letters;1998-05
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