Effect of Zn on the electro-optical characteristics of metalorganic chemical vapour deposition grown 1.3 [micro sign]m InGaAsP/InP lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19960423?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Unintentional zinc diffusion in inp pn-homojunctions
2. Zn diffusion behavior in InGaAsP/InP capped mesa buried heterostructures
3. Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm
4. Reduced threshold current temperature dependence in double heterostructure lasers due to separate p-n and heterojunctions
5. Studies of the Microstructure in Degraded Buried Heterostructure GaInAsP/InP Laser Diodes and Its Relation with the Lasing Threshold Current
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1. 1.55 μm extremely efficient and polarization insensitive tunable Mach-Zehnder wavelength duplexer based on an InGaAsP/InP ridge waveguide structure;Optoelectronic Materials and Devices II;2007-11-19
2. Influence of Zn doping profiles on excitation dependence of photoluminescence intensity in InGaAsP heterostructures;Electronics Letters;2005
3. Growth optimization for p-n junction placement in the integration of heterojunction bipolar transistors and quantum well modulators on InP;IEEE Journal of Selected Topics in Quantum Electronics;2000-01
4. Role of p-doping profile and regrowth on the static characteristics of 1.3-μm MQW InGaAsP-InP lasers: experiment and modeling;IEEE Journal of Quantum Electronics;1999
5. Be–Zn interdiffusion and its influence on InGaAsP lasers fabricated by hybrid growth of chemical beam epitaxy and metalorganic vapor phase epitaxy;Applied Physics Letters;1997-05-26
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