Dependence of threshold current on the number of wells in AlGaAs‐GaAs quantum well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96213
Reference11 articles.
1. Some characteristics of the GaAs/GaAlAs graded‐index separate‐confinement heterostructure quantum well laser structure
2. Some characteristics of the GaAs/GaAlAs graded‐index separate‐confinement heterostructure quantum well laser structure
3. Short wavelength (visible) GaAs quantum well lasers grown by molecular beam epitaxy
4. Short wavelength (visible) quantum well lasers grown by molecular beam epitaxy
5. Calculated threshold current of GaAs quantum well lasers
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