Short wavelength (visible) quantum well lasers grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference15 articles.
1. Device characteristics of (AlGa)As multiquantum‐well heterostructure lasers grown by molecular beam epitaxy
2. Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy
3. Very low threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM-VPE
4. Very narrow graded‐barrier single quantum well lasers grown by metalorganic chemical vapor deposition
5. Some characteristics of the GaAs/GaAlAs graded‐index separate‐confinement heterostructure quantum well laser structure
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of broadening and high-injection effects on GaAs-AlGaAs quantum well lasers;IEEE Journal of Quantum Electronics;1988-08
2. Operational and design considerations for broad area graded barrier quantum well heterostructure lasers grown by metalorganic chemical vapor deposition for high power applications;Fiber and Integrated Optics;1988-01
3. Dependence of threshold current on the number of wells in AlGaAs‐GaAs quantum well lasers;Applied Physics Letters;1985-08
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