Temperature-dependent study of the quasi-Fermi level separation in double quantum well P-I-N structures-Reference-Cited by-同舟云学术

Temperature-dependent study of the quasi-Fermi level separation in double quantum well P-I-N structures

Published:2000-05 Issue: Volume:51-52 Page:265-274
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kluftinger Benjamin,Barnham Keith,Nelson Jenny,Foxon Tom,Cheng Tin

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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