Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride-Reference-Cited by-同舟云学术

Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride

Published:2011-02 Issue:3 Volume:109 Page:034105
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Seiffe Johannes,Gautero Luca,Hofmann Marc,Rentsch Jochen,Preu Ralf,Weber Stefan,Eichel Rüdiger A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3544421

Reference52 articles.

1. Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition

2. Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride

3. Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivation

4. Proceedings of the 29th IEEE Photovoltaics Specialists Conference;Dauwe S.,2002

5. Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiCx:H films

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