Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2-Reference-Cited by-同舟云学术

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Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

Published:2007-03-26 Issue:13 Volume:90 Page:133120
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Stepina N. P.,Dvurechenskii A. V.,Armbrister V. A.,Kesler V. G.,Novikov P. L.,Gutakovskii A. K.,Kirienko V. V.,Smagina Zh. V.,Groetzschel R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2719163

Reference12 articles.

1. A silicon nanocrystals based memory

2. Memory characterization of SiGe quantum dot flash memories with HfO/sub 2/ and SiO/sub 2/ tunneling dielectrics

3. Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/

4. MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation

5. Oxidation and reduction behavior of Ge/Si islands

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectro-ellipsometric modeling and optimization of two-dimensional Ge layer and three-dimensional Ge dot/island structures on SiO2 substrates;Japanese Journal of Applied Physics;2021-01-01

2. Real-time spectro-ellipsometric approach to distinguish between two-dimensional Ge layer growth and Ge dot formation on SiO2 substrates;Applied Surface Science;2018-04

3. Formation of stable charge regions in an array of germanium nanocrystallites inside SiO2 using electrostatic force microscopy;Technical Physics;2015-05

4. Computer simulations of the early-stage growth of Ge clusters at elevated temperatures on patterned Si substrate using the kinetic Monte Carlo method;Thin Solid Films;2013-06

5. Low-frequency Raman scattering from Si/Ge nanocrystals in different matrixes caused by acoustic phonon quantization;Journal of Applied Physics;2012-09

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