Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center-Reference-Cited by-同舟云学术

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Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center

Published:2011-01-03 Issue:1 Volume:98 Page:011102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Woodward N.,Poplawsky J.,Mitchell B.,Nishikawa A.,Fujiwara Y.,Dierolf V.

Funder

Ministry of Education, Culture, Sports, Science, and Technology

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3533806

Reference12 articles.

1. GaN:Eu Interrupted Growth Epitaxy (IGE): Thin Film Growth and Electroluminescent Devices

2. High Brightness ZnS and GaN Electroluminescent Devices Using PZT Thick Dielectric Layers

3. Visible lasing from GaN:Eu optical cavities on sapphire substrates

4. 1.54 μm emitters based on erbium doped InGaN p-i-n junctions

5. Current-injected 1.54μm light emitting diodes based on erbium-doped GaN

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1. Red Electroluminescence from Light Emitting Diodes Based on Eu-Doped ZnO Embedded in p-GaN/Al₂O₃/n-ZnO Heterostructures;ECS Journal of Solid State Science and Technology;2023-07-01

2. Formation and optical characteristics of ZnO:Eu/ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition;Japanese Journal of Applied Physics;2021-03-29

3. Tuning the valence and concentration of europium and luminescence centers in GaN through co-doping and defect association;Physical Review Materials;2021-03-04

4. Carrier dynamics and excitation of Eu3+ ions in GaN;Physical Review B;2020-06-17

5. Picosecond time-resolved dynamics of energy transfer between GaN and the various excited states of Eu3+ ions;Physical Review B;2019-08-02

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