Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2152109
Reference16 articles.
1. New approach to the growth of low dislocation relaxed SiGe material
2. Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
3. Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction
4. Photoluminescence of pseudomorphic SiGe formed by 74Ge+ ion implantation in the overlayer of silicon-on-insulator material
5. High-quality strain-relaxed SiGe alloy grown on implanted silicon–on–insulator substrate
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