Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4913575
Reference23 articles.
1. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
2. Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN∕GaN heterojunctions
3. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
4. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
5. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
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