Positron annihilation spectroscopy as a diagnostic tool for process monitoring of buried oxide layer formation in Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1525403
Reference9 articles.
1. Evolution and Future Trends of SIMOX Material
2. Properties of the buried oxide layer in SIMOX structures
3. Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon
4. Positron beam analysis of semiconductor materials using a two-detector Doppler broadening coincidence system
5. Buried oxide and defects in oxygen implanted Si monitored by positron annihilation
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates;Journal of Applied Physics;2009-11-15
2. Observation of vacancy defects at silicon grain boundaries formed via suppressed solid phase epitaxy;Journal of Physics D: Applied Physics;2008-02-08
3. Identification of vacancy–oxygen complexes in oxygen-implanted silicon probed with slow positrons;Journal of Applied Physics;2004-04
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