Buried oxide and defects in oxygen implanted Si monitored by positron annihilation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1380411
Reference31 articles.
1. Properties of the buried oxide layer in SIMOX structures
2. An annealing study of defects induced by electron irradiation of Czochralski-grown Si using a positron lifetime technique
3. Positron trapping rates and their temperature dependencies in electron-irradiated silicon
4. Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
5. Positron Annihilation in Proton Irradiated Czochralski-Grown Si
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