Split Ga vacancies in n-type and semi-insulating β-Ga2O3 single crystals-Reference-Cited by-同舟云学术

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Split Ga vacancies in n-type and semi-insulating β-Ga2O3 single crystals

Published:2021-02-15 Issue:7 Volume:118 Page:072104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Karjalainen A.¹²^ORCID,Makkonen I.²^ORCID,Etula J.¹^ORCID,Goto K.³^ORCID,Murakami H.³,Kumagai Y.³,Tuomisto F.¹²^ORCID

Affiliation:

1. Department of Applied Physics, Aalto University, P.O. Box 15100, FI-00076 Espoo, Finland

2. Department of Physics and Helsinki Institute of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki, Finland

3. Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo, Japan

Funder

Magnus Ehrnroothin Säätiö

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0033930

Reference23 articles.

1. Current status of Ga2O3power devices

2. On the feasibility of p-type Ga2O3

3. Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3

4. Proton irradiation induced defects in β-Ga2O3: A combined EPR and theory study

5. ORIGIN OF THE BLUE LUMINESCENCE OF β-Ga2O3

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1. On the nature of as-grown and irradiation-induced Ga vacancy defects in β-Ga2O3;Journal of Applied Physics;2024-08-13

2. Defects and doping in ultra-wide band gap (Al,Ga)N and β-(Al,Ga)2O3 alloys;Journal of Materials Research;2024-08-12

3. Assignments of vibrational lines to OD-impurity complexes for adventitious impurities in β-Ga2O3;APL Materials;2024-07-01

4. Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments;Materials Today Physics;2024-06

5. O-H centers in β-Ga2O3 with a Ga(1) vacancy at their core;Oxide-based Materials and Devices XV;2024-03-15

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