Electrical characteristics and conduction mechanisms of amorphous subnanometric Al2O3–TiO2laminate dielectrics deposited by atomic layer deposition
Author:
Funder
French Minestery of Economy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4967534
Reference37 articles.
1. Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides
2. High capacitance density metal-insulator-metal structure based on Al2O3–HfTiO nanolaminate stacks
3. High-capacitance Cu/Ta/sub 2/O/sub 5//Cu MIM structure for SoC applications featuring a single-mask add-on process
4. Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors
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