High-capacitance Cu/Ta/sub 2/O/sub 5//Cu MIM structure for SoC applications featuring a single-mask add-on process-Reference-Cited by-同舟云学术

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High-capacitance Cu/Ta/sub 2/O/sub 5//Cu MIM structure for SoC applications featuring a single-mask add-on process

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Container-title:Digest. International Electron Devices Meeting,
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Author:

Ishikawa T.,Kodama D.,Matsui Y.,Hiratani M.,Furusawa T.,Hisamoto D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8330/25999/01175991.pdf?arnumber=1175991

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