High capacitance density metal-insulator-metal structure based on Al2O3–HfTiO nanolaminate stacks
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2425030
Reference10 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. A study of mixtures of HfO2 and TiO2 as high-k gate dielectrics
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4. Dielectric properties of the (Nb1 − xTax)2O5 solid solution
5. Effects of annealing conditions on optical and electrical characteristics of titanium dioxide films deposited by electron beam evaporation
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3. Electrical characteristics and conduction mechanisms of amorphous subnanometric Al2O3–TiO2laminate dielectrics deposited by atomic layer deposition;Applied Physics Letters;2016-11-14
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