Dependence of the density of defects in the oxide on Czochralski silicon on its thickness
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368190
Reference14 articles.
1. Origin and elimination of defects in SiO2thermally grown on Czochralski silicon substrate
2. Nucleation temperature of large oxide precipitates in as-grown Czochralski silicon crystal
3. Crystal-Originated Singularities on Si Wafer Surface after SC1 Cleaning
4. Oxide defects originating from Czochralski silicon substrates
5. The origin of defects in SiO2thermally grown on Czochralski silicon substrates
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