Density functional theory to calculate accurate defect energy levels in silicon
Author:
Publisher
AIP Publishing
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0141286
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1. First-principles theory of nonradiative carrier capture via multiphonon emission
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3. Anharmonic lattice relaxation during nonradiative carrier capture
4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
5. P. Blood and J. W. Orton, “The Electrical Characterization of Semiconductors: Majority Carriers and Electron States,” p. 4.
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