Exploration of the electronic structure and thermoelectric properties of the carbon-doped bulk GaN materials by first-principles calculations-Reference-Cited by-同舟云学术

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Exploration of the electronic structure and thermoelectric properties of the carbon-doped bulk GaN materials by first-principles calculations

Published:2024-07 Issue: Volume:4 Page:100204
ISSN:2949-8228
Container-title:Next Materials
language:en
Short-container-title:Next Materials

Author:

Ji Hongyu,Song Chunyan^ORCID,Liao Hui,Yang Ningxuan,Wang Rui,Tang Guanghui,Huang Boyang,Qi Jiaming

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference35 articles.

1. Thermoelectric effects;Jaumot;Proc. Inst. Radio Eng.,1958

2. Grain boundary re-crystallization and sub-nano regions leading to high plateau figure of merit for Bi2Te3 nanoflakes;Liu;Energy Environ. Sci.,2023

3. Interstitial Cu: an effective strategy for high carrier mobility and high thermoelectric performance in GeTe;Yin;Adv. Funct. Mater.,2023

4. Structural, elastic, electronic and thermoelectric properties of AlxGa1-xN (x = 0, 0.125, 0.375, 0.625, 0.875 and 1) semiconductors;Kafi;Mater. Sci. Semicond. Process.,2020

5. Thermoelectric performance of ternary Cu-based chalcogenide Cu2TiTe3;Xiong;Appl. Phys. Lett.,2023

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