Tunneling-assisted Poole-Frenkel conduction mechanism in HfO2 thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2135895
Reference16 articles.
1. On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors
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3. Dielectric property and conduction mechanism of ultrathin zirconium oxide films
4. Reasons for obtaining an optical dielectric constant from the Poole–Frenkel conduction behavior of atomic-layer-deposited HfO[sub 2] films
5. P. Hesto, in Instabilities in Silicon Devices, edited by G. Barbottin and A. Vapaille (North-Holland, Amsterdam, The Netherlands, 1986), p. 303.
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