Direct evidence for strain inhomogeneity in InxGa1−xN epilayers by Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1791324
Reference17 articles.
1. J. Frandon, F. Demangeot, and M. A. Renucci, in Optoelectronic Properties of Semiconductors and Superlattices, edited by M. O. Manasreh and H. X. Jiang (Taylor & Francis, London, 2002), Vol. 13, pp. 333–377.
2. Resonant Raman Scattering in GaN/Al0.15 Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures
3. Ultraviolet Raman study of A1(LO) and E2 phonons in InxGa1−xN alloys
4. Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates
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