Valence-band electron-tunneling measurement of the gate work function: Application to the high-κ/polycrystalline-silicon interface-Reference-Cited by-同舟云学术

Valence-band electron-tunneling measurement of the gate work function: Application to the high-κ/polycrystalline-silicon interface

Published:2005-09 Issue:5 Volume:98 Page:053712
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pantisano Luigi,Afanas’ev Valeri,Pourtois Geoffrey,Chen P. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2031947

Reference24 articles.

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4. S. Kubicek et al., Proceedings of the European Solid-State Device Research Conference (ESSDERC), Estoril, Portugal, 16–18 Sept. (IEEE, Picataway, NJ, 2003), pp. 251–254.

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