Lateral diffusion of minority carriers in InAsSb-based nBn detectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3492853
Reference13 articles.
1. HgCdTe infrared detector material: history, status and outlook
2. Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low‐pressure metalorganic chemical vapor deposition
3. Suppression of leakage currents in InAsSb MWIR photodiodes by chemical treatment and illumination
4. Room-temperature InAsSb photovoltaic detectors for mid-infrared applications
5. InAsSb∕GaSb heterostructure based mid-wavelength-infrared detector for high temperature operation
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