Trap parameters in the infrared InAsSb absorber found by capacitance and noise measurements
Author:
Funder
Narodowe Centrum Nauki
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/ab3c02/pdf
Reference27 articles.
1. High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode
2. Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices
3. Lateral diffusion of minority carriers in InAsSb-based nBn detectors
4. Room-temperature InAsSb photovoltaic detectors for mid-infrared applications
5. Room temperature performance of mid-wavelength infrared InAsSb nBn detectors
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