Conduction mechanisms in thin atomic layer deposited Al2O3 layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4829910
Reference29 articles.
1. Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics
2. Relating Extrinsic Breakdown Statistics to the Initial Current Leakage Distribution in Gate Oxides
3. Conduction mechanisms in MOS gate dielectric films
4. Space-Charge-Limited Currents in Solids
5. Theory of space-charge-limited current enhanced by Frenkel effect
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