Low-temperature epitaxial growth of high quality Si1−xGex (x ≥ 0.99) films on Si(001) wafer by reactive thermal chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4804362
Reference24 articles.
1. Silicon-Germanium Strained Layer Materials in Microelectronics
2. Si/SiGe hetero-junction solar cell with optimization design and theoretical analysis
3. Thin Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells: Design and Material Quality Requirements
4. Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates
5. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
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1. Fabrication of silicon PIN diode with SiGe junction for soft x-ray detector using low-temperature technology;Radiation Physics and Chemistry;2022-03
2. High-quality Ge-rich SiGe thin films epitaxially grown on Si at low temperature by a two-step approach;CrystEngComm;2019
3. Effect of Hydrogen Annealing on the Property of Low-temperature Epitaxial Growth of Sige Thin Films on Si Substrate;Journal of Inorganic Materials;2017
4. Ultralow temperature epitaxial growth of silicon-germanium thin films on Si(001) using GeF4;Diamond and Related Materials;2016-09
5. A novel method for in situ growing Ge-rich polycrystalline SiGe thin films on glass at low temperature;Scripta Materialia;2015-10
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