Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells-Reference-Cited by-同舟云学术

Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells

Published:2015-02-14 Issue:6 Volume:117 Page:064504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Oosthoek J. L. M.¹,Voogt F. C.²,Attenborough K.²^ORCID,Verheijen M. A.³⁴,Hurkx G. A. M.⁵,Gravesteijn D. J.⁶^ORCID,Kooi B. J.¹

Affiliation:

1. Zernike Institute for Advanced Materials and Materials innovation institute M2i, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands

2. NXP, Gerstweg 2, 6534 AE Nijmegen, The Netherlands

3. Department of Applied Physics, Eindhoven University of Technology, NL-5600 MB Eindhoven, The Netherlands

4. Philips Innovation Services Eindhoven, High Tech Campus 11, NL-5656 AE Eindhoven, The Netherlands

5. NXP Semiconductors, High Tech Campus 60, 5656 AE Eindhoven, The Netherlands

6. NXP Semiconductors, Kapeldreef 75, B 3001 Leuven, Belgium

Funder

Materials innovation institute M2i

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4908023

Reference29 articles.

1. Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology

2. Low-cost and nanoscale non-volatile memory concept for future silicon chips

3. Phase Change Materials and Their Application to Nonvolatile Memories

4. Phase change memory technology

5. Void Formation Induced Electrical Switching in Phase-Change Nanowires

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