Void Formation Induced Electrical Switching in Phase-Change Nanowires-Reference-Cited by-同舟云学术

Void Formation Induced Electrical Switching in Phase-Change Nanowires

Published:2008-10-31 Issue:12 Volume:8 Page:4562-4567
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Meister Stefan¹,Schoen David T.¹,Topinka Mark A.¹,Minor Andrew M.¹,Cui Yi¹

Affiliation:

1. Department of Materials Science and Engineering, Department of Physics, Stanford University, Stanford, California 94305, National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley, California 94720

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl802808f

Reference26 articles.

1. Ultra-high-density phase-change storage and memory

2. Solution-phase deposition and nanopatterning of GeSbSe phase-change materials

3. Phase-change materials for rewriteable data storage

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5. Understanding the phase-change mechanism of rewritable optical media

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