Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Reference35 articles.
1. Yamada, N., Ohno, E., Nishiuchi, K., Akahira, N. & Takao, M. Rapid phase transitions of GeTe–Sb2Te3 . J. Appl. Phys. 69, 2849–2856 (1991).
2. Lankhorst, H. R., Ketelaars, W. S. M. M. & Wolters, R. A. M. Low-cost and nanoscale non-volatile memory concept for future silicon chips. Nature Mater. 4, 347–352 (2005).
3. Ovshinsky, S. R. Reversible electrical switching phenomena in disordered structures. Phys. Rev. Lett. 21, 1450–1453 (1968).
4. Lee, S.-H., Jung, Y. & Agarwal, R. Highly scalable non-volatile and ultra-low power phase-change nanowire memory. Nature Mater. 2, 626–630 (2007).
5. Kohara, S. et al. Structural basis for the fast phase change of Ge2Sb2Te5: Ring statistics analogy between the crystal and amorphous phases. Appl. Phys. Lett. 89, 201910 (2006).
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