A nonvolatile organic resistive switching memory based on lotus leaves-Reference-Cited by-同舟云学术

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A nonvolatile organic resistive switching memory based on lotus leaves

Published:2019-01 Issue: Volume:516 Page:168-174
ISSN:0301-0104
Container-title:Chemical Physics
language:en
Short-container-title:Chemical Physics

Author:

Qi Yiming,Sun Bai,Fu Guoqiang,Li Tengteng,Zhu Shouhui,Zheng Liang,Mao Shuangsuo,Kan Xiang,Lei Ming,Chen Yuanzheng^ORCID

Funder

National Key Research and Development Plan

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference46 articles.

1. A resistive switching memory device with a negative differential resistance at room temperature;Kadhim;Appl. Phys. Lett.,2018

2. Basic principles of STT-MRAM cell operation in memory arrays;Khvalkovskiy;J. Phys. D: Appl. Phys.,2013

3. Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells;Oosthoek;J. Appl. Phys.,2015

4. Origin of a continuously enlarge memristor effect in Nb inserted into MgB2 multilayer constructed heterojunctions;Zhu;Vacuum,2018

5. Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges;Waser;Adv. Mater.,2009

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