Raman study of stress‐relieved silicon‐on‐sapphire films prepared by cw‐laser annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347511
Reference24 articles.
1. Raman measurements of stress in silicon‐on‐sapphire device structures
2. Effect of heat treatment on residual stress and electron Hall mobility of laser annealed silicon‐on‐sapphire
3. Stress‐relieved regrowth of silicon on sapphire by laser annealing
4. Crystallization of Amorphous Silicon Layers RF-Sputtered on Sapphire by CW Ion Laser Annealing
5. Anomalous Residual-Stress in Pulsed-Laser-Annealed Silicon-on-Sapphire Revealed by Raman Scattering
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1. In situobservation of the indentation-induced phase transformation of silicon thin films;Physical Review B;2012-03-05
2. Residual stresses in silicon-on-sapphire thin film systems;International Journal of Solids and Structures;2011-05
3. Production, Characterization and Application of Silicon-on-Sapphire Wafers;Key Engineering Materials;2010-06
4. Continuous wave laser-induced temperature rise in the thin films of silicon nanocrystals using Raman scattering;Thin Solid Films;2003-02
5. Residual lattice strain in thin silicon-on-insulator bonded wafers: Effects on electrical properties and Raman shifts;Journal of Applied Physics;2001-02-15
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