Effect of heat treatment on residual stress and electron Hall mobility of laser annealed silicon‐on‐sapphire
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92988
Reference12 articles.
1. (Invited) Is SOS Ready for VLSI?
2. A 7000-gate microprocessor on SOS—PULCE
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4. Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy
5. Magnetoresistance and the Electronic Structure of Si on Sapphire
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