Study of the SET switching event of VCM-based memories on a picosecond timescale-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Study of the SET switching event of VCM-based memories on a picosecond timescale

Published:2020-05-29 Issue:20 Volume:127 Page:204501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

von Witzleben M.¹^ORCID,Hennen T.¹^ORCID,Kindsmüller A.¹^ORCID,Menzel S.²^ORCID,Waser R.¹²³^ORCID,Böttger U.¹

Affiliation:

1. Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, Sommerfeldstraße 24, D-52074 Aachen, Germany

2. Peter Grünberg Institut 7, Forschungszentrum Jülich and JARA-FIT, Wilhelm Johnen Straße, D-52428 Jülich, Germany

3. Peter Grünberg Institut 10, Forschungszentrum Jülich and JARA-FIT, Wilhelm Johnen Straße, D-52428 Jülich, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0003840

Reference46 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Memristive devices for computing

3. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

4. Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current

5. 10×10nm² Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2D and Quasi-2D Halide Perovskite-Based Resistive Switching Memory Systems;Electronics;2024-09-08

2. Full factorial analysis of gradual switching in thermally oxidized memristive devices;Journal of Applied Physics;2024-06-17

3. Voltage-time dilemma and stochastic threshold-voltage variation in pure-silver atomic switches;Physical Review Applied;2024-01-17

4. It's Getting Hot in Here: Hardware Security Implications of Thermal Crosstalk on ReRAMs;IEEE Transactions on Reliability;2024

5. Amorphous Oxide Semiconductor Memristors: Brain-inspired Computation;Advanced Memory Technology;2023-10-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3