Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current-Reference-Cited by-同舟云学术

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Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current

Published:2013-04 Issue:4 Volume:60 Page:1384-1389
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ninomiya Takeki,Wei Zhigiang,Muraoka Shusaku,Yasuhara Ryutaro,Katayama Koji,Takagi Takeshi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6482652/06476058.pdf?arnumber=6476058

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