Atmospheric pressure organometallic vapor phase epitaxy growth of high‐mobility GaAs using trimethylgallium and arsine
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103509
Reference15 articles.
1. High‐purity GaAs layers grown by low‐pressure metalorganic chemical vapor deposition
2. Very high purity InP epilayer grown by metalorganic chemical vapor deposition
3. Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxy
4. Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Characterization of high-purity arsine and gallium arsenide epilayers grown by MOCVD;Journal of Crystal Growth;2008-11
2. Specific Materials;Organometallic Vapor-Phase Epitaxy;1999
3. Intrinsic carbon incorporation in very high purity MOVPE GaAs;Journal of Crystal Growth;1992-11
4. Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium;Journal of Electronic Materials;1992-10
5. Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily dopedp‐type GaAs;Applied Physics Letters;1991-01-14
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