Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99034
Reference18 articles.
1. High Purity GaAs Crystals Grown by Liquid Phase Epitaxy
2. Self‐compensation of donors in high‐purity GaAs
3. Reduction of the acceptor impurity background in GaAs grown by molecular beam epitaxy
4. Electron mobility in vapor‐grown GaAs films
5. Low compensation vapor phase epitaxial gallium arsenide
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