Effects of deep levels on the optoelectronic properties of InGaAs/InAlAs multiquantum‐well structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341093
Reference10 articles.
1. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
2. New high‐speed long‐wavelength Al0.48In0.52As/Ga0.47In0.53As multiquantum well avalanche photodiodes
3. Long-wavelength waveguide multiple-quantum-well (MQW) optical modulator with 30:1 on/off ratio
4. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
5. Deep electron trapping center in Si‐doped InGaAlP grown by molecular‐beam epitaxy
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1. Deep trap in InGaAs grown by gas source molecular beam epitaxy;Journal of Applied Physics;1999-01
2. Multiple quantum well compressive strained heterostructures for low driving power all-optical waveguide switches;Journal of Crystal Growth;1998-06
3. Multiple Quantum Well Heterostructures Showing Optical Nonlinearities at Low Intensity and Fast Recovery;Journal of Nonlinear Optical Physics & Materials;1998-03
4. Low frequency and microwave characterization of submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular‐beam epitaxy;Journal of Applied Physics;1989-12-15
5. Impact ionization rates in an InGaAs/InAlAs superlattice;Applied Physics Letters;1989-09-04
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