Low frequency and microwave characterization of submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343600
Reference27 articles.
1. Hot‐electron velocity overshoot in Ga0.47In0.53As
2. Double heterostructure Ga0.47In0.53As MESFETs by MBE
3. Heterojunction InAlAs/InP MESFETs grown by OMVPE
4. High-performance InAlAs/InGaAs HEMTs and MESFETs
5. Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Defect-related luminescence in InAlAs on InP grown by molecular beam epitaxy;Semiconductor Science and Technology;2017-08-16
2. Characteristics of In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMT's with n-and p-channel doping;IEEE Transactions on Electron Devices;1993
3. Elimination of mesa-sidewall gate leakage in InAlAs/InGaAs heterostructures by selective sidewall recessing;IEEE Electron Device Letters;1992-04
4. Mesa-sidewall gate leakage in InAlAs/InGaAs heterostructure field-effect transistors;IEEE Transactions on Electron Devices;1992
5. Strained-insulator In/sub x/Al/sub 1-x/As/n/sup +/-In/sub 0.53/Ga/sub 0.47/As heterostructure field-effect transistors;IEEE Transactions on Electron Devices;1991
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