High-frequency V-doped ZnO/SiC surface acoustic wave devices with enhanced electromechanical coupling coefficient-Reference-Cited by-同舟云学术

High-frequency V-doped ZnO/SiC surface acoustic wave devices with enhanced electromechanical coupling coefficient

Published:2019-03-18 Issue:11 Volume:114 Page:113504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fu Sulei¹^ORCID,Wang Weibiao²,Li Qi¹,Lu Zengtian²,Chen Zhenglin³,Luo Jingting⁴,Shen Junyao¹,Wang Rui¹,Song Cheng¹^ORCID,Zeng Fei¹^ORCID,Pan Feng¹^ORCID

Affiliation:

1. Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

2. SHOULDER Electronics Limited, Wuxi 214124, Jiangsu, China

3. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

4. College of Physics and Energy, Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060, China

Funder

Beijing Science and Technology Project

National Key Research and Development Program of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5086445

Reference37 articles.

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3. ScAlN-Based LCAT Mode Resonators Above 2 GHz With High FOM and Reduced Fabrication Complexity

4. Investigation of surface acoustic waves on LiNbO3, quartz, and LiTaO3 by laser probing

5. Optimum leaky-SAW cut of LiTaO/sub 3/ for minimised insertion loss devices

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