Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4867639
Reference19 articles.
1. Study on the resistive switching time of TiO2 thin films
2. Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
3. Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
4. Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films
5. Impact of Electroforming Current on Self-Compliance Resistive Switching in an ${\rm ITO}/{\rm Gd{:}SiO}_{\rm x}/{\rm TiN}$ Structure
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1. Electrical and optical artificial synapses properties of TiN-nanoparticles incorporated HfAlO-alloy based memristor;Chaos, Solitons & Fractals;2021-12
2. Study of reactively sputtered nickel nitride thin films;Journal of Alloys and Compounds;2021-01
3. Highly Uniform Resistive Switching in HfO 2 Films Embedded with Ordered Metal Nanoisland Arrays;Advanced Functional Materials;2019-04-16
4. Electrochemical characteristics of NixN thin films deposited by DC and HiPIMS reactive magnetron sputtering;Thin Solid Films;2019-01
5. Tuning Resistive, Capacitive, and Synaptic Properties of Forming Free TiO2-x -Based RRAM Devices by Embedded Pt and Ta Nanocrystals;physica status solidi (a);2017-10-25
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