Band alignment of InAs1−xSbx (0.05
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3144271
Reference17 articles.
1. Band parameters for III–V compound semiconductors and their alloys
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4. High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD
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1. InAsSb-based photodetectors;Mid-infrared Optoelectronics;2020
2. InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm;Optics Letters;2015-04-20
3. The spin–orbit splitting band in InGaAsSb alloys lattice-matched to InAs;Journal of Physics D: Applied Physics;2014-06-24
4. $\hbox{InGaP/GaAs}_{0.57}\hbox{P}_{0.28} \hbox{Sb}_{0.15}/\hbox{GaAs}$ Double HBT With Weakly Type-II Base/Collector Junction;IEEE Electron Device Letters;2012-04
5. Strain-balanced InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03
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