High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition
2. High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm
3. Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition
4. Optical losses of Al‐free lasers for λ=0.808 and 0.98 μm
5. High Power InAsSb/InAsSbP Laser Diodes Emitting at 3 ∼ 5 μm Range
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