Author:
Razeghi M.,Diaz J.,Yi H. J.,Wu D.,Lane B.,Rybaltowski A.,Xiao Y.,Jeon H.
Abstract
ABSTRACTWe report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70 % up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78 K were achieved from the double-heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the use of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.
Publisher
Springer Science and Business Media LLC
Reference21 articles.
1. n‐AlGaSb and GaSb/AlGaSb double‐heterostructure lasers grown by organometallic vapor phase epitaxy
2. The growth of InP1-xSbx by metalorganic chemical vapor deposition
3. 175 K continuous wave operation of InAsSb/InAlAsSb quantum‐well diode lasers emitting at 3.5 μm
4. Cavity length dependence of the threshold behavior in thin quantum well semiconductor lasers
5. 10 Diaz J. , Yi H. , Rybaltowski A. , Lane B. , Lukas G. , Wu D. , Kim S. , Erdtmann M. , Kass E. , and Razeghi M. , “Aluminium free InAsSbP/InAsSb/lnAs laser diodes ( λ= 3.2 μm ) grown by low-pressure metalorganic chemical vapor deposition”, to be published in Appl. Phys. Lett.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献