Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Single‐mode molecular beam epitaxy grown PbEuSeTe/PbTe buried‐heterostructure diode lasers for CO2high‐resolution spectroscopy
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1. Features of Liquid–Phase Epitaxy of (InSb)1–z(Sn2)z Solid Solutions of Molecular Substitution on GaAs and GaP Substrates;2022 International Conference on Information Science and Communications Technologies (ICISCT);2022-09-28
2. InAs(1 – y)Sby/InAsSbP Narrow-Gap Heterostructures (y = 0.09–0.16) Grown by Metalorganic Vapor Phase Epitaxy for the Spectral Range of 4–6 μm;Physics of the Solid State;2019-10
3. Novel InP- and GaSb-based light sources for the near to far infrared;Semiconductor Science and Technology;2016-10-11
4. InP-based 2.8–3.5 μm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures;Applied Physics Letters;2012-11-26
5. High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm);Semiconductors;2010-02
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