On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2
Author:
Affiliation:
1. NaMLab gGmbH, Noethnitzer Str. 64, Dresden D-01187, Germany
2. Chair of Nanoelectronic Materials, TU Dresden, Dresden D-01062, Germany
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5026424
Reference36 articles.
1. Prospective of Semiconductor Memory Devices: from Memory System to Materials
2. Current status and challenges of ferroelectric memory devices
3. Ferroelectricity in hafnium oxide thin films
4. Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films
5. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
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