Observation of ion‐implantation‐damage‐createdn‐type conductivity in InP after high‐temperature annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354574
Reference17 articles.
1. Proton bombardment in InP
2. Deep and shallow levels inn‐type indium phosphide irradiated with 200‐keV deuterons
3. Damaged-induced isolation in n-type InP by light-ion implantation
4. Electrical properties of Fe-doped semi-insulating InP after proton bombardment and annealing
5. OTCS study of defect state in Fe-doped semi-insulating InP induced by ion irradiation and thermal annealing
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1. Selective porosification of n-InP(100) after focused ion beam implantation of Si;physica status solidi (a);2003-05
2. Electrical isolation of n-type and p-type InP layers by proton bombardment;Journal of Applied Physics;2001-05-15
3. Correlation between the depth profiles of the implantation-induced carriers and the lattice strains in high-energy implanted and annealed InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
4. Electrical isolation of n-type InP by ion bombardment: Dose dependence and thermal stability;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
5. Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions;Journal of Applied Physics;1999-11
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